Prof. Guangyu Zhang’s group in Institute of Physics (Chinese Academy of Science), China, made a significant breakthrough in the structure engineering of a two-dimensional (2D) MoS2 and published their work on Small.

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2D MoS2 (2H phase), consists of three layers of atoms S-Mo-S, is a semiconducting material and has attracted increasing attention in recent years due to its unique properties and potential applications. In this study, Zhang’s research group reported the first realization of rolling a 2D MoS2 sheet into nanoscale scrolls by argon plasma treatment. In their experiments, they found that during the plasma treatment, the grain boundaries of MoS2 are firstly separated and then the MoS2 film starts to scroll along the separated edges. The nanoscrolls have tubular structure with a hollow core of a few nanometers. Spectroscopic studies reveal the partial removal of S atoms in the top S-layer of MoS2 by argon plasma treatment. The removal of S atoms in top S-layer and the dangling bond formation would lead to a compressive stress within this layer and drive the scrolling of the MoS2 sheet. This scrolling technique is convenient, solvents-free, high-yielding, and also applicable for other 2D material with 3 layers of atoms.


The full paper can be found at:

DOI: 10.1002/smll.201601413


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